PD57030STR-E datasheet(1/18 Pages) STMICROELECTRONICS

部品番号	PD57030STR-E

部品情報	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PDF	18 Pages

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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1 / 18 page

August 2006

Rev 1

1/18

18

PD57030-E

PD57030S-E

RF POWER transistor, LDMOST plastic family

N-Channel enhancement-mode lateral MOSFETs

General features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 30W with 14dB gain @ 945MHz / 28V

■ New RF plastic package

Description

The PD57030 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 28 V in common source mode at

frequencies up to 1 GHz.

PD57030 boasts the excellent gain, linearity and

reliability of ST’s latest LDMOS technology

mounted in the first true SMD plastic RF power

package, PowerSO-10RF. PD57030’s superior

linearity performance makes it an ideal solution

for base station applications.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of

assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

www.st.com

Order codes

Part number

Package

Packing

PD57030-E

PowerSO-10RF (formed lead)

Tube

PD57030S-E

PowerSO-10RF (straight lead)

Tube

PD57030TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD57030STR-E

PowerSO-10RF (straight lead)

Tape and reel

同様の部品番号 - PD57030STR-E

メーカー	部品番号	データシート	部品情報
STMicroelectronics	PD57030STR-E	506Kb / 18P	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 28-May-2010

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同様の説明 - PD57030STR-E

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PD57030STR-E データシート(PDF) 1 Page - STMicroelectronics

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同様の部品番号 - PD57030STR-E

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