MBR790 datasheet(1/2 Pages) TSC

部品番号	MBR790

部品情報	7.5 AMPS. Schottky Barrier Rectifiers

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メーカー	TSC [Taiwan Semiconductor Company, Ltd]

ホームページ	http://www.taiwansemi.com

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Dimensions in inches and (millimeters)

Version: A06

MBR735 - MBR7150

7.5 AMPS. Schottky Barrier Rectifiers

TO-220AC

.412(10.5)

MAX

.185(4.70)

.175(4.44)

.055(1.40)

.045(1.14)

.27(6.86)

.23(5.84)

.11(2.79)

.10(2.54)

.025(0.64)

.014(0.35)

.154(3.91)

.148(3.74)

DIA

PIN1

2

.113(2.87)

.103(2.62)

.16(4.06)

.14(3.56)

.037(0.94)

.027(0.68)

.205(5.20)

.195(4.95)

.594(15.1)

.587(14.9)

.56(14.22)

.53(13.46)

PIN 1

PIN 2

CASE

Features

Plastic material used carries Underwriters

Laboratory Classifications 94V-0

Metal silicon rectifier, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

260

oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

Cases: JEDEC TO-220AC molded plastic body

Terminals: Pure tin plated, lead free. solderable per

MIL-STD-750, Method 2026

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol MBR

735

MBR

745

MBR

750

MBR

760

MBR

790

MBR

7100

MBR

7150

Units

Maximum Recurrent Peak Reverse Voltage

VRRM

35

45

50

60

90

100

150

V

Maximum RMS Voltage

VRMS

24

31

35

42

63

70

105

V

Maximum DC Blocking Voltage

VDC

35

45

50

60

90

100

150

V

Maximum Average Forward Rectified Current

See Fig. 1

I(AV)

7.5

A

Peak Repetitive Forward Current (Square Wave, 20KHz) at

Tc=105oC

IFRM

15.0

A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method )

IFSM

150

A

Peak Repetitive Reverse Surge Current (Note 1)

IRRM

1.0

0.5

A

Maximum Instantaneous Forward Voltage at (Note 2)

IF=7.5A,Tc=25℃

IF=7.5A,Tc=125℃

IF=15A,Tc=25℃

IF=15A,Tc=125℃

VF

－

0.57

0.84

0.72

0.75

0.65

－

0.92

0.82

－

0.95

0..92

－

V

Maximum Instantaneous Reverse Current @ Tc =25 oC

at Rated DC Blocking Voltage (Note 1)

@ Tc=125 oC

IR

0.1

15.0

0.1

10

0.1

5.0

mA

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/uS

Typical Junction Capactance

Cj

360

280

200

160

pF

Maximum Thermal Resistance, (Note 3)

RθJC

RθJA

5.0

15.0

oC/W

Operating Junction Temperature Range

TJ

-65 to +150

oC

Storage Temperature Range

TSTG

-65 to +175

oC

Notes:

1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated.

同様の部品番号 - MBR790

メーカー	部品番号	データシート	部品情報
Taiwan Semiconductor Co...	MBR790	60Kb / 2P	7.5 AMPS. Schottky Barrier Rectifiers
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	MBR790	248Kb / 2P	7.5 AMPS. Schottky Barrier Rectifiers
Kersemi Electronic Co.,...	MBR790	987Kb / 2P	Plastic material used carries Underwriters Laboratory Classifications 94V-0
Kersemi Electronic Co.,...	MBR790	1Mb / 2P	High Surge Capacity

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