HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6807

Issued Date : 1998.08.12

Revised Date : 2004.09.07

Page No. : 1/4

HMBTA64

HSMC Product Specification

HMBTA64

PNP SILICON TRANSISTOR

Description

The HMBTA64 is designed for application requiring extremely high current gain at

collector current to 500mA.

Features

• High D.C. Current Gain

• For Complementary use with NPN Type HMBTA14

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature........................................................................................................................... -55 ~ +150

°C

Junction Temperature................................................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T

• Maximum Voltages and Currents (T

V

V

V

I

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV

CBO

-30

-

-

V

I

BV

CES

-30

-

-

V

I

BV

EBO

-10

-

-

V

I

I

CBO

-

-

-100

nA

V

I

EBO

-

-

-100

nA

V

*V

CE(sat)

--

-1.5

V

I

V

BE(on)

--

-2

V

I

*h

FE1

10K

-

-

I

*h

FE2

20K

-

-

I

f

T

125

-

-

MHz

I

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23