2SC2230 datasheet(1/2 Pages) ISC

部品番号	2SC2230

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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Silicon NPN Power Transistor

2SC2230

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 160V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat)= 0.5V(Max)@ IC=50mA

APPLICATIONS

· Switching regulator and high voltage switching

applications

· High speed DC-DC converter applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

100

mA

IB

Base Current-Continuous

50

mA

Pc

Collector Power Dissipation

800

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA ; IB= 0A

160

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 50mA; IB=5mA

--

0.5

V

VBE(on)

Base-Emitter Voltage

VCE= 10V; IC= 1mA

--

0.7

V

ICBO

Collector Cutoff Current

VCB= 200V ; IE= 0A

--

0.1

μ

A

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0A

--

0.1

μ

A

hFE-1

DC Current Gain

IC= 10mA ; VCE= 10V

120

--

400

hFE-2

DC Current Gain

IC= 50mA ; VCE= 10V

80

--

同様の部品番号 - 2SC2230

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Toshiba Semiconductor	2SC2230	180Kb / 3P	TRANSISTOR (HIGH VOLTAGE GENERAL AMPLIFIER, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS)
Toshiba Semiconductor	2SC2230	133Kb / 5P	Silicon NPN Triple Diffused Type (PCT Process)
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Foshan Blue Rocket Elec...	2SC2230	869Kb / 6P	Silicon NPN transistor in a TO-92LM Plastic Package
Jiangsu Changjiang Elec...	2SC2230	3Mb / 3P	TO-92MOD Plastic-Encapsulate Transistors

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