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TSL257 データシート(PDF) 2 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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TSL257 データシート(HTML) 2 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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2 / 8 page ![]() TSL257 HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER TAOS023E − SEPTEMBER 2007 2 r r Copyright E 2007, TAOS Inc. The LUMENOLOGY r Company www.taosinc.com Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) 6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ±10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C 5 s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −25°C to 85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) 260°C . . . . . . . . . . . . . . . . . . . . Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) 260°C . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to GND. Recommended Operating Conditions MIN MAX UNIT Supply voltage, VDD 2.7 5.5 V Operating free-air temperature, TA 0 70 °C Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted) (see Notes 2 and 3) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VD Dark voltage Ee = 0 0 15 mV V Maximum output voltage swing VDD = 4.5 V, No Load 4.49 V VOM Maximum output voltage swing VDD = 4.5 V, RL = 10 kΩ 4 4.2 V VO Output voltage Ee = 1.54 μW/cm2, λp = 470 nm, Note 5 1.6 2 2.4 V αVD Temperature coefficient of dark voltage (VD) TA = 0°C to 70°C −15 μV/°C λp = 428 nm, see Notes 4 and 8 1.18 N Irradiance responsivity λp = 470 nm, see Notes 5 and 8 1.30 V/( W/cm2) Ne Irradiance responsivity λp = 565 nm, see Notes 6 and 8 1.58 V/(μW/cm2) λp = 645 nm, see Notes 7 and 8 1.68 PSRR Power supply rejection ratio fac = 100 Hz, see Note 9 55 dB pp y j fac = 1 kHz, see Note 9 35 dB IDD Supply current Ee = 1.54 μW/cm2, λp = 470 nm, Note 5 1.9 3.5 mA NOTES: 2. Measured with RL = 10 kΩ between output and ground. 3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source. 4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength λp = 428 nm, spectral halfwidth Δλ½ = 65 nm. 5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength λp = 470 nm, spectral halfwidth Δλ½ = 35 nm. 6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength λp = 565 nm, spectral halfwidth Δλ½ = 28 nm. 7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength λp = 645 nm, spectral halfwidth Δλ½ = 25 nm. 8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0. 9. Power supply rejection ratio PSRR is defined as 20 log (ΔVDD(f)/ΔVO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V. |
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