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PDTC124XM データシート(PDF) 1 Page - Nexperia B.V. All rights reserved |
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PDTC124XM データシート(HTML) 1 Page - Nexperia B.V. All rights reserved |
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1 / 9 page ![]() PDTC124XM 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ 23 October 2024 Product data sheet 1. General description NPN Resistor-Equipped Transistor (RET) in an leadless ultra small SOT883 (SC-101) Surface- Mounted Device (SMD) plastic package. PNP complement: PDTA124XM 2. Features and benefits • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified 3. Applications • General purpose switching and amplification • Inverter and interface circuits • Circuit driver 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 15.4 22 28.6 kΩ R2/R1 bias resistor ratio Tamb = 25 °C 1.7 2.1 2.6 |
同様の部品番号 - PDTC124XM |
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同様の説明 - PDTC124XM |
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