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TP2510 データシート(PDF) 2 Page - Supertex, Inc |
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TP2510 データシート(HTML) 2 Page - Supertex, Inc |
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2 / 5 page ![]() 2 TP2510 Ordering Information Device Package Options BV DSS/BVDGS (V) R DS(ON) (Ω) V GS(TH) (max) (V) I D(ON) (min) (A) TO-243AA (SOT-89) Die* TP2510 TP2510N8-G TP2510ND -100 3.5 -2.4 -1.5 * MIL visual screening available. -G indicates package is RoHS compliant (‘Green’) Pin Configuration Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage ±20V Operating and storage temperature -55°C to +150°C Soldering temperature* 300°C * Distance of 1.6 mm from case for 10 seconds. Symbol Parameter Min Typ Max Units Conditions Electrical Characteristics (@25°C unless otherwise specified ) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. BV DSS Drain-to-source breakdown voltage -100 - - V V GS = 0V, ID = -2.0mA V GS(th) Gate threshold voltage -1.0 - -2.4 V V GS = VDS, ID= -1.0mA ∆V GS(th) Change in V GS(th) with temperature - - 5.0 mV/OCV GS = VDS, ID= -1.0mA I GSS Gate body leakage - - -100 nA V GS = ± 20V, VDS = 0V I DSS Zero gate voltage drain current - --10 μA V GS = 0V, VDS = Max Rating - -1.0 mA V GS = 0V, VDS = 0.8 Max Rating, T A = 125°C I D(ON) ON-state drain current -0.4 -0.6 - A V GS = -5.0V, VDS = -25V -1.5 -2.5 - V GS = -10V, VDS = -25V R DS(ON) Static drain-to-source ON-State Resistance - 5.0 7.0 Ω V GS = -5.0V, ID = -250mA 2.0 3.5 V GS = -10V, ID = -0.75A ∆R DS(ON) Change in R DS(ON) with temperature - - 1.7 %/OCV GS = -10V, ID = -0.75A G FS Forward transconductance 300 360 - mmho V DS = -25V, ID = -0.75A C ISS Input capacitance - 80 125 pF V GS = 0V, V DS = -25V, f = 1.0 MHz C OSS Common source output capacitance - 40 70 C RSS Reverse transfer capacitance - 10 25 t d(ON) Turn-ON delay time - - 10 ns V DD = -25V, I D = -1.0A, R GEN = 25Ω t r Rise time - - 15 t d(OFF) Turn-OFF delay time - - 20 t f Fall time - - 15 V SD Diode forward voltage drop - - -1.8 V V GS = 0V, ISD = -1.0A t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = -1.0A Absolute Maximum Ratings Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. TO-243AA (SOT-89) (Top View) GATE DRAIN SINK DRAIN Product Marking TP5AW W = Code for Week Sealed = “Green” Packaging TO-243AA (SOT-89) N8 |
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