isc N-Channel MOSFET Transistor

IRFS731

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

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SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 0.25mA

350

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 350V; VGS= 0 V

--

250

uA

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0 V

--

±

100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 0.25mA

2.0

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 3A

--

1.0

Ω

VSD

Forward On-Voltage

IS= 5.5A; VGS= 0 V

--

1.8

V