BAS16 datasheet(1/2 Pages) TEL

部品番号	BAS16

部品情報	SILICON PLANAR SWITCHING DIODE

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メーカー	TEL [TRANSYS Electronics Limited]

ホームページ	http://www.transyselectronics.com

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SILICON PLANAR SWITCHING DIODE

BAS16

SOT-23

Formed SMD Package

Marking

BAS16 = A6

High-Speed Switching Diodes

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNIT

Continuous Reverse Voltage

VR

V

Repetitive Peak Reverse Voltage

VRRM

V

Forward Current (DC)

IF

mA

Repetitive Peak Forward Current

IFRM

mA

Non Repetitive Peak Forward Current

(Per Crystal)

t=1

µµs

IFSM

A

t=1ms

IFSM

A

t=1s

IFSM

A

Power Dissipation @ Ta=25ºC

PD

W

Storage Temperature Range

Tstg

oC

Junction Temperature

Tj

oC

Thermal Resistance

Junction to Ambient in free fair

Rth (j-a)

K/W

ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Forward Voltage

VF

IF = 1 mA

0.715

V

IF = 10 mA

0.855

V

IF = 50 mA

1.0

V

IF = 150 mA

1.25

V

Reverse Voltage Leakage Current

IR

VR=25V, Tj=150ºC

30

µA

VR=75V

1.0

µA

VR=75V, Tj=150ºC

50

µA

Diode Capacitance

Cd

VR=0V, f=1MHz

2.0

pF

Forward Recovery Voltage When

Switched to

Vfr

IF=10mA, tP=20ns

1.75

V

Reverse Recovery Time When Switched

from

trr

IF=10mA to

IR=60mA, RL100 Ω,

measured at IR=1mA

4.0

ns

Recovery Charge When Switched from

QS

IF=10mA to VR=5V,

RL=100 Ω,

45

pC

1.0

500

VALUE

75

85

150

- 55 to +150

0.5

215

500

0.25

4.0

Pin Configuration

1 =

2 = NC

3 =

ANODE

CATHODE

3

1

2

Transys

Electronics

LI M ITE D

同様の部品番号 - BAS16

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