IRF630N datasheet(1/2 Pages) TEL

部品番号	IRF630N

部品情報	Power MOSFET

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メーカー	TEL [TRANSYS Electronics Limited]

ホームページ	http://www.transyselectronics.com

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IRF630N/NS/NL

Power MOSFET

V

DSS = 200V, RDS(on) = 0.30 ohm, ID = 9.3 A

Symbol

D

G

S

ELECTRICAL CHARACTERISICS at

Parameter

Unit

Symbol

Test Conditions

V(BR)DSS

Drain to Source Breakdown Voltage

VGS = 0 VDC,

Volt

Tj = 25 C Maximum. Unless stated Otherwise

Value

Drain to Source Leakage Current

IGSS

VDS = 200VDC, VGS = 0VDC

Typ

Min

Max

200

-

C

Tj=150

VDS = 160VDC, VGS = 0VDC

25

-

--

250

Gate to Source Leakage Current

IDSS

VGS = +20VDC

100

-

--

-100

nA

VGS = -20VDC

Gate Threshold Voltage

VDS = VGS,

VGS(th)

Volt

2.0

-

Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 5.4A

Gate Charge

QG

ID = 5.4A

nC

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

35

-

nC

Input Capacitance

VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ

Output Capacitance

Transfer Capacitance

CISS

COSS

CRSS

pF

-

575

89

25

Turn On Delay Time

Turn Off Delay Time

Rise Time

Fall Time

td(on)

tr

td(off)

tf

--

7.9

14

--

27

--

15

nS

Continuous Source Current

IS

Pulsed Source Current

Forward Voltage (Diode)

ISM

VSD

VGS = 0VDC, IS =5.4A,

A

V

9.3

-

--

37

-

W

Volt

MAXIMUM RATINGS

Gate to Source Voltage

Parameter

Unit

Drain to Source

Voltage

Amp

Continuous Drain Current

ID

Symbol

VGS

VDSS

Amp

Pulsed Drain Current

IDM

Total Power Dissapation

Thermal Resistance

(Junction to Ambient)

Condition

RTH (J-A)

PD

Value

(Tj = 25 C unless stated otherwise)

200

82

37

9.3

+/- 20V

(TA = 25 C)

62

Volt

µA

ID = 250µA

Maximum Operating Temperature Range (Tj)

-55 to +175 C

ID = 250µA

4.0

-

0.30

-

6.5

VDS = 160VDC,

VGS = 10VDC

17

1.3

Tp = 300µS

C/W

VDD = 100VDC, ID = 4.8A, RG =18

RD = 20

IRF620N

IRF630NS

IRF630NL

Page 1 of 2

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同様の部品番号 - IRF630N

メーカー	部品番号	データシート	部品情報
International Rectifier	IRF630N	155Kb / 11P	Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
Fairchild Semiconductor	IRF630N	209Kb / 11P	N-Channel Power MOSFETs 200V, 9.3A, 0.30?
International Rectifier	IRF630N	240Kb / 11P	HEXFET Power MOSFET
Inchange Semiconductor ...	IRF630N	119Kb / 2P	isc N-Channel MOSFET Transistor
New Jersey Semi-Conduct...	IRF630N	74Kb / 2P	N-Channel MOSFET Transistor

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