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GD50PIX65C5S データシート(PDF) 1 Page - StarPower Europe AG |
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GD50PIX65C5S データシート(HTML) 1 Page - StarPower Europe AG |
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1 / 13 page ![]() GD50PIX65C5S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 2/9/2018 1/13 Preliminary STARPOWER SEMICONDUCTOR IGBT GD50PIX65C5S 650V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6 μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 oC Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic |
同様の部品番号 - GD50PIX65C5S |
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同様の説明 - GD50PIX65C5S |
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