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GD100FFY120C6S データシート(PDF) 4 Page - StarPower Europe AG

部品番号 GD100FFY120C6S
部品情報  1200V/100A 6 in one-package
PDF  9 Pages
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メーカー  STARPOWER [StarPower Europe AG]
ホームページ  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD100FFY120C6S データシート(HTML) 4 Page - StarPower Europe AG

  GD100FFY120C6S Datasheet HTML 1Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 2Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 3Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 4Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 5Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 6Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 7Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 8Page - StarPower Europe AG GD100FFY120C6S Datasheet HTML 9Page - StarPower Europe AG  
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GD100FFY120C6S
IGBT Module
©2019 STARPOWER Semiconductor Ltd.
1/30/2019
4/9
SN0C
Diode Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VF
Diode Forward
Voltage
IF=100A,VGE=0V,Tj=25
oC
1.70
2.15
V
IF=100A,VGE=0V,Tj=125
oC
1.65
IF=100A,VGE=0V,Tj=150
oC
1.65
Qr
Recovered Charge
VR=600V,IF=100A,
-di/dt=2800A/
μs,V
GE=-15V
Tj=25
oC
9.0
μC
IRM
Peak Reverse
Recovery Current
110
A
Erec
Reverse Recovery
Energy
3.32
mJ
Qr
Recovered Charge
VR=600V,IF=100A,
-di/dt=2800A/
μs,V
GE=-15V
Tj=125
oC
16.2
μC
IRM
Peak Reverse
Recovery Current
120
A
Erec
Reverse Recovery
Energy
5.70
mJ
Qr
Recovered Charge
VR=600V,IF=100A,
-di/dt=2800A/
μs,V
GE=-15V
Tj=150
oC
19.5
μC
IRM
Peak Reverse
Recovery Current
123
A
Erec
Reverse Recovery
Energy
7.13
mJ
NTC Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R25
Rated Resistance
5.0
k
Ω
∆R/R
Deviation of R100
TC=100
oC,R
100=493.3
Ω
-5
5
%
P25
Power
Dissipation
20.0
mW
B25/50
B-value
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
3375
K
B25/80
B-value
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
3411
K
B25/100
B-value
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
3433
K
Module Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
LCE
Stray Inductance
21
nH
RCC’+EE’
Module Lead Resistance, Terminal to Chip
1.80
m
Ω
RthJC
Junction-to-Case (per IGBT)
Junction-to-Case (per Diode)
0.293
0.505
K/W
RthCH
Case-to-Heatsink (per IGBT)
Case-to-Heatsink (per Diode)
Case-to-Heatsink (per Module)
0.085
0.147
0.009
K/W
M
Mounting Torque, Screw M6
3.0
6.0
N.m
G
Weight of Module
300
g



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