ST7LITEUSX datasheet(77/108 Pages) STMICROELECTRONICS

77 / 108 page

ST7LITEUSx

77/108

12.6 MEMORY CHARACTERISTICS

TA = -40°C to 125°C, unless otherwise specified

12.6.1 RAM and Hardware Registers

12.6.2 FLASH Program Memory

Notes:

1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-

isters (only in HALT mode). Guaranteed by construction, not tested in production.

2. Up to 32 bytes can be programmed at a time.

3. The data retention time increases when the TA decreases.

4. Data based on reliability test results and monitored in production.

5. Data based on characterization results, not tested in production.

6. Guaranteed by Design. Not tested in production.

7. Design target value pending full product characterization.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode 1)

HALT mode (or RESET)

1.6

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD

Operating voltage for Flash write/erase

2.4

5.5

tprog

Programming time for 1~32 bytes 2)

TA=−40 to +125°C

Programming time for 1 kByte

TA=+25°C

0.16

0.32

tRET

Data retention 4)

TA=+55°C

years

NRW

Write erase cycles

TA=+25°C

10k 7)

cycles

IDD

Supply current 6)

Read / Write / Erase

modes

fCPU = 8MHz, VDD = 5.5V

2.6

No Read/No Write Mode

100

µA

Power down mode / HALT

0.1

µA

ST7LITEUSX データシート(PDF) 77 Page - STMicroelectronics

ST7LITEUSX データシート(HTML) 77 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

データシートダウンロード