GD660HTX75P7HB

IGBT Module

©2023 STARPOWER Semiconductor Ltd.

2/28/2022

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B04

STARPOWER

SEMICONDUCTOR

IGBT

GD660HTX75P7HB

750V/660A 6 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

hybrid and electric vehicle.

Features



Low VCE(sat) Trench IGBT technology



Low switching losses



6μs short circuit capability



VCE(sat) with positive temperature coefficient



Maximum junction temperature 175oC



Low inductance case



Fast & soft reverse recovery anti-parallel FWD



Isolated copper pinfin baseplate using Si3N4 AMB technology

Typical Applications



Automotive application



Hybrid and electric vehicle



Inverter for motor drive

Equivalent Circuit Schematic