2SC3307_06 datasheet(2/5 Pages) TOSHIBA

部品番号	2SC3307

部品情報	Silicon NPN Triple Diffused Type High-Speed and High-Voltage Switching Applications

PDF	5 Pages

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2 / 5 page

2SC3307

2006-11-09

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 800 V, IE = 0

―

100

μA

Emitter cut-off current

IEBO

VEB = 7 V, IC = 0

―

Collector-base breakdown voltage

V (BR) CEO

IC = 1 mA, IE = 0

900

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = 10 mA, IB = 0

800

―

hFE (1)

VCE = 5 V, IC = 10 mA

―

DC current gain

hFE (2)

VCE = 5 V, IC = 5 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = 5 A, IB = 1 A

―

1.0

Base-emitter saturation voltage

VBE (sat)

IC = 5 A, IB = 1 A

―

1.5

Rise time

―

1.0

Storage time

tstg

―

3.0

Switching time

Fall time

IB1 = −IB2 = 0.4 A, duty cycle ≤ 1%

―

1.0

μs

Marking

20 μs

VCC ≈ 400 V

Output

IB2

IB1

Input

IC = 1 A

2SC3307

TOSHIBA

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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