2SC2510A datasheet(2/4 Pages) TOSHIBA

部品番号	2SC2510A

部品情報	SILICON NPN EPITAXIAL PLANAR TYPE

PDF	4 Pages

Scroll/Zoom	100%

メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SC2510A

2007-11-01

ELECTRICAL CHARACTERISTICS (Tc = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Emitter Breakdown Voltage

V (BR) CEO

IC = 100mA, IB = 0

—

Collector-Emitter Breakdown Voltage

V (BR) CES

IC = 100mA, VEB = 0

—

Emitter-Base Breakdown Voltage

V (BR) EBO

IE = 1mA, IC = 0

—

DC Current Gain

hFE

VCE = 5V, IC = 10A *

—

Collector Output Capacitance

Cob

VCB = 28V, IE = 0

f = 1MHz

—

450

600

Power Gain

12.2

13.3

—

Input Power

—

WPEP

Collector Efficiency

ηC

—

Intermodulation Distortion

IMD

VCC = 28V, f1 = 28.000MHz,

f2 = 28.001MHz

Iidle = 100mA

Po = 150WPEP (Fig.)

—

−30

Series Equivalent Input Impedance

Zin

—

1.4

−j0.9

—

Ω

Series Equivalent Output Impedance

Zout

VCC = 28V, f1 = 28.000MHz,

f2 = 28.001MHz,

Po = 150WPEP

—

2.3

−j0.9

—

Ω

* Pulse Test:

Pulse Width ≤ 100μs, Duty Cycle ≤ 3%

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