1SS413

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS413

High Speed Switching Application

•

Low forward voltage

•

Low reverse current

•

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

25

V

Reverse voltage

20

V

Maximum (peak) forward current

100

mA

Average forward current

50

mA

Surge current (10ms)

1

A

Power dissipation

P *

100

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*

Mounted on a glass epoxy circuit board of 20 × 20 mm,

pad dimension of 4 × 4 mm.

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.33

―

―

―

0.38

―

Forward voltage

―

―

0.50

0.55

V

Reverse current

―

―

―

0.5

μA

Total capacitance

―

―

3.9

―

pF

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-1L1A

Weight:0.0006g(typ.)

Unit: mm

Y

0.1±0.05

0.48

+0.02

-0.03

A

0.07 M A

0.6±0.05

0.2

±0.05

fSC