2SC6087 datasheet(1/5 Pages) TOSHIBA

部品番号	2SC6087

部品情報	Silicon NPN Epitaxial Type

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メーカー	TOSHIBA [Toshiba Semiconductor]

ホームページ	http://www.semicon.toshiba.co.jp/eng

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2SC6087

2007-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6087

Power Amplifier Applications

Power Switching Applications

Low collector emitter saturation voltage

: VCE (sat) = 0.5 V (max)（IC = 1A）

High-speed switching: tstg = 0.4 μs (typ)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

160

V

VCEX

160

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

7

V

DC

IC

2.5

A

Collector current

Pulse

ICP

5.0

A

Base current

IB

1.0

A

Collector power dissipation

PC

1.3

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55～150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-8M1A

Weight:0.55g(typ)

1 : BASE

2 : COLLECTOR

3 : EMITTER

同様の部品番号 - 2SC6087

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	2SC6087	1Mb / 73P	Bipolar Small-Signal Transistors

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