MP4507 datasheet(2/7 Pages) TOSHIBA

2 / 7 page

MP4507

2004-07-01

Marking

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance fromchannel to

ambient

(4 devices operation, Ta = 25°C)

ΣRth (j-a)

°C/W

Thermal resistance from channel to

case

(4 devices operation, Tc = 25°C)

ΣRth (j-c)

5.0

°C/W

Maximum lead temperature for

soldering purposes

(3.2 mm from case for 10 s)

260

°C

Electrical Characteristics (Ta = 25°C) (NPN transistor)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 100 V, IE = 0 A

―

μA

Collector cut-off current

ICEO

VCE = 100 V, IB = 0 A

―

μA

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0 A

0.3

―

2.0

Collector-base breakdown voltage

V (BR) CBO

IC = 1 mA, IE = 0 A

100

―

Collector-emitter breakdown voltage

V (BR) CEO

IC = 30 mA, IB = 0 A

100

―

hFE (1)

VCE = 3 V, IC = 0.5 A

1000

―

DC current gain

hFE (2)

VCE = 3 V, IC = 3 A

1000

―

Collector-emitter

VCE (sat)

IC = 3 A, IB = 12 mA

―

2.0

Saturation voltage

Base-emitter

VBE (sat)

IC = 3 A, IB = 12 mA

―

2.5

Transition frequency

VCE = 3 V, IC = 0.5 A

―

MHz

Collector output capacitance

Cob

VCB = 50 V, IE = 0 A, f = 1 MHz

―

Turn-on time

ton

―

0.5

―

Storage time

tstg

―

3.0

―

Switching time

Fall time

IB1 = −IB2 = 12 mA, duty cycle ≤ 1%

―

2.0

―

μs

20 μs

VCC = 30 V

Output

IB2

IB1

Input

MP4507

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

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