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MT6L72FS データシート(PDF) 2 Page - Toshiba Semiconductor

部品番号 MT6L72FS
部品情報  VHF~UHF Band Low-Noise Amplifier Applications
PDF  3 Pages
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT6L72FS データシート(HTML) 2 Page - Toshiba Semiconductor

  MT6L72FS Datasheet HTML 1Page - Toshiba Semiconductor MT6L72FS Datasheet HTML 2Page - Toshiba Semiconductor MT6L72FS Datasheet HTML 3Page - Toshiba Semiconductor  
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MT6L72FS
2007-11-01
2
Electrical Characteristics Q1 (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 8 V, IE = 0
⎯
⎯
1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
1
μA
DC current gain
hFE
VCE = 3 V, IC = 10 mA
70
⎯
140
⎯
Reverse transfer capacitance
Cre(Note)
VCB = 1 V, IE = 0, f = 1 MHz
⎯
0.21
0.4
pF
Transition frequency
fT
VCE = 3 V, IC = 15 mA
16
20
⎯
GHz
⎪S21e⎪
2 (1)
VCE = 3 V, IC = 15 mA, f = 1 GHz
16.5
18.5
⎯
Insertion gain
⎪S21e⎪
2 (2)
VCE = 3 V, IC = 15 mA, f = 2 GHz
10.5
13
⎯
dB
Noise figure
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
⎯
1.3
1.8
dB
Electrical Characteristics Q2 (Ta = 25°C)
Characteristic
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
⎯
⎯
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
100
⎯
160
⎯
Reverse transfer capacitance
Cre(Note)
VCB = 1 V, IE = 0, f = 1 MHz
⎯
0.6
0.85
pF
Transition frequency
fT
VCE = 1 V, IC = 5 mA
4
6
⎯
GHz
⎪S21e⎪
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
⎯
3.5
⎯
Insertion gain
⎪S21e⎪
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
4
6.5
⎯
dB
Noise figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz
⎯
2.4
3.2
dB
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.



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