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M48Z35AV データシート(PDF) 13 Page - STMicroelectronics

部品番号 M48Z35AV
部品情報  5.0V or 3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM
PDF  24 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48Z35AV データシート(HTML) 13 Page - STMicroelectronics

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2.4
VCC noise and negative going transients
ICC transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (see Figure 9)
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on VCC that drive it to values below VSS by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from VCC to VSS (cathode connected to VCC, anode to VSS). (Schottky diode 1N5817
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 9.
Supply voltage protection
AI02169
VCC
0.1
μF
DEVICE
VCC
VSS



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