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TC74ACT86FN データシート(PDF) 3 Page - Toshiba Semiconductor

部品番号 TC74ACT86FN
部品情報  CMOS Digital Integrated Circuit Silicon Monolithic Quad Exclusive OR Gate
PDF  7 Pages
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74ACT86FN データシート(HTML) 3 Page - Toshiba Semiconductor

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TC74ACT86P/F/FN
2007-10-01
3
Electrical Characteristics
DC Characteristics
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC
(V)
Min
Typ.
Max
Min
Max
Unit
High-level input
voltage
VIH
⎯
4.5~
5.5
2.0
⎯
⎯
2.0
⎯
V
Low-level input
voltage
VIL
⎯
4.5~
5.5
⎯
⎯
0.8
⎯
0.8
V
High-level output
voltage
VOH
VIN
= VIH or
VIL
IOH = −50 μA
IOH = −24 mA
IOH = −75 mA
(Note)
4.5
4.5
5.5
4.4
3.94
⎯
4.5
⎯
⎯
⎯
⎯
⎯
4.4
3.80
3.85
⎯
⎯
⎯
V
Low-level output
voltage
VOL
VIN
= VIH or
VIL
IOL = 50 μA
IOL = 24 mA
IOL = 75 mA
(Note)
4.5
4.5
5.5
⎯
⎯
⎯
0.0
⎯
⎯
0.1
0.36
⎯
⎯
⎯
⎯
0.1
0.44
1.65
V
Input leakage
current
IIN
VIN = VCC or GND
5.5
⎯
⎯
±0.1
⎯
±1.0
μA
ICC
VIN = VCC or GND
5.5
⎯
⎯
4.0
⎯
40.0
μA
Quiescent supply
current
IC
Per input: VIN = 3.4 V
Other input: VCC or GND
5.5
⎯
⎯
1.35
⎯
1.5
mA
Note:
This spec indicates the capability of driving 50
Ω transmission lines.
One output should be tested at a time for a 10 ms maximum duration.
AC Characteristics (CL = 50 pF, RL = 500 Ω, input: tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
Propagation delay
time
tpLH
tpHL
⎯
5.0
± 0.5
⎯
5.7
10.5
1.0
12.0
ns
Input capacitance
CIN
⎯
⎯
5
10
⎯
10
pF
Power dissipation
capacitance
CPD
(Note)
⎯
⎯
23
⎯
⎯
⎯
pF
Note:
CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD･VCC･fIN + ICC/4 (per gate)



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