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TC74HC30AP データシート(PDF) 1 Page - Toshiba Semiconductor |
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TC74HC30AP データシート(HTML) 1 Page - Toshiba Semiconductor |
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1 / 8 page ![]() TC74HC30AP/AF/AFN 2007-10-01 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC30AP,TC74HC30AF,TC74HC30AFN 8-Input NAND Gate The TC74HC30A is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 5 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 12 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 10 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 6 V • Pin and function compatible with 74LS30 Pin Assignment NC: No connection IEC Logic Symbol Note: xxxFN (JEDEC SOP) is not available in Japan. TC74HC30AP TC74HC30AF TC74HC30AFN Weight DIP14-P-300-2.54 : 0.96 g (typ.) SOP14-P-300-1.27A : 0.18 g (typ.) SOL14-P-150-1.27 : 0.12 g (typ.) |
同様の部品番号 - TC74HC30AP |
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同様の説明 - TC74HC30AP |
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