BUT30V datasheet(1/2 Pages) ISC

部品番号	BUT30V

部品情報	Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BUT30V

www.iscsemi.com

1

DESCRIPTION

·

Hih Current Power Bipolar Module

·

Very Low Rth Junction Case

APPLICATIONS

·

Motor contro

·

SMPS & UPS

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

125

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

100

A

ICM

Collector Peak Current

150

A

IB

Base Current-Continuous

20

A

IBM

Base Peak Current

30

A

PC

Collector Power Dissipation

@ TC=25℃

250

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.5

℃

/W

同様の部品番号 - BUT30V

メーカー	部品番号	データシート	部品情報
STMicroelectronics	BUT30V	105Kb / 7P	NPN TRANSISTOR POWER MODULE Jul-1997
	BUT30V	340Kb / 7P	NPN TRANSISTOR POWER MODULE Feb-2003
	BUT30V	340Kb / 7P	NPN TRANSISTOR POWER MODULE Feb-2003

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