PHD3N20L datasheet(1/2 Pages) ISC

部品番号	PHD3N20L

部品情報	isc N-Channel MOSFET Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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isc N-Channel MOSFET Transistor

PHD3N20L

www.iscsemi.com

1

FEATURES

·Drain Current -ID= 3.5A@ TC=25℃

·Drain Source Voltage -VDSS= 200V(Min)

·Static Drain-Source On-Resistance

-RDS(on) = 1.5Ω(Max)@VGS= 5V

DESCRIPTION

·

DC-to-DC Converter

·

General Industrial Applications

·

Power Motor Control

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage-Continuous

±

15

V

ID

Drain Current-Continuous

3.5

A

IDM

Drain Current-Single Pulse

14

A

PD

Total Dissipation @TC=25℃

50

W

TJ

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

3.0

℃

/W

同様の部品番号 - PHD3N20L

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	PHD3N20L	56Kb / 7P	PowerMOS transistor Logic level FET September 1997 Rev 1.000

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