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データシートサーチシステム |
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データシートサーチシステム |
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RY201 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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RY201 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon PNP Darlington Power Transistor RY201 www.iscsemi.com 1 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= -3A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A APPLICATIONS · Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-DC -120 mA PC Collector Power Dissipation TC=25℃ 65 W Collector Power Dissipation Ta=25℃ 2 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃ /W |
同様の部品番号 - RY201 |
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同様の説明 - RY201 |
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