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ST10F271 データシート(PDF) 149 Page - STMicroelectronics

部品番号 ST10F271
部品情報  16-bit MCU with 128 Kbyte Flash memory and 12 Kbyte RAM
PDF  173 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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ST10F271 データシート(HTML) 149 Page - STMicroelectronics

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ST10F271
Electrical characteristics
149/173
The given values of CA do not include the stray capacitance of the package and of the
printed circuit board: the negative resistance values are calculated assuming additional 5pF
to the values in the table. The crystal shunt capacitance (C0) and the package capacitance
between XTAL1 and XTAL2 pins is globally assumed equal to 10pF.
The external resistance between XTAL1 and XTAL2 is not necessary, since already present
on the silicon.
24.8.12
32 kHz oscillator specifications
VDD = 5V ± 10%, VSS = 0V, TA = –40 to +125°C
1.
At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,
the current biasing is reduced to lower the power consumption of the system.
2.
Not 100% tested, guaranteed by design characterization.
Figure 48.
32kHz crystal oscillator connection diagram
Table 72.
Main oscillator negative resistance (module)
CA = 15pF
CA = 25pF
CA = 35pF
min.
typ.
max.
min.
typ.
max.
min.
typ.
max.
4 MHz
545
1035
550
1050
430
850
8 MHz
240
450
170
350
120
250
Table 73.
32kHz oscillator characteristics
Symbol
Parameter
Conditions
Value
Unit
min.
typ.
max.
gm32
Oscillator Transconductance 1)
Start-up
20
31
50
µA/V
Normal run
8
17
30
µA/V
VOSC32 Oscillation Amplitude
2)
Peak to Peak
0.5
1.0
2.4
V
VAV32
Oscillation Voltage level 2)
Sine wave middle
0.7
0.9
1.2
V
tSTUP32 Oscillator Start-up Time
2)
Stable VDD
–15
s
CA
CA
crystal
ST10F271



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