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TC75S59F データシート(PDF) 3 Page - Toshiba Semiconductor |
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TC75S59F データシート(HTML) 3 Page - Toshiba Semiconductor |
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3 / 9 page  TC75S59F/FU/FE 2007-11-01 3 Electrical Characteristics (VDD = 5 V, VSS = GND, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO ⎯ ⎯ ⎯ ±1 ±7 mV Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA Common mode input voltage CMVIN ⎯ ⎯ 0 ⎯ 4.1 V Supply current IDD (Note) ⎯ ⎯ ⎯ 110 220 μA Voltage gain GV ⎯ ⎯ ⎯ 94 ⎯ dB Sink current Isink ⎯ VOL = 0.5 V 13 25 ⎯ mA Output leak current ILEAK ⎯ VO = 5 V ⎯ 5 ⎯ nA Output voltage VOL ⎯ Isink = 5.0 mA ⎯ 0.1 0.3 V Operating supply voltage VDD ⎯ ⎯ 1.8 ⎯ 7.0 V tPLH (1) ⎯ Over drive = 100 mV ⎯ 200 ⎯ Propagation delay time (turn on) tPLH (2) ⎯ TTL step input ⎯ 140 ⎯ ns tPHL (1) ⎯ Over drive = 100 mV ⎯ 80 ⎯ Propagation delay time (turn off) tPHL (2) ⎯ TTL step input ⎯ 60 ⎯ ns tTLH ⎯ Over drive = 100 mV ⎯ 160 ⎯ Response time tTHL ⎯ Over drive = 100 mV ⎯ 3 ⎯ ns Electrical Characteristics (VDD = 3 V, VSS = GND, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO ⎯ ⎯ ⎯ ±1 ±7 mV Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA Input bias current II ⎯ ⎯ ⎯ 1 ⎯ pA Common mode input voltage CMVIN ⎯ ⎯ 0 ⎯ 2.1 V Supply current IDD (Note) ⎯ ⎯ ⎯ 100 200 μA Sink current Isink ⎯ VOL = 0.5 V 6 18 ⎯ mA Output leak current ILEAK ⎯ VO = 3 V ⎯ 5 ⎯ nA Output voltage VOL ⎯ Isink = 5.0 mA ⎯ 0.15 0.35 V Propagation delay time (turn on) tPLH ⎯ Over drive = 100 mV ⎯ 160 ⎯ ns Propagation delay time (turn off) tPHL ⎯ Over drive = 100 mV ⎯ 70 ⎯ ns tTLH ⎯ Over drive = 100 mV ⎯ 170 ⎯ Response time tTHL ⎯ Over drive = 100 mV ⎯ 3 ⎯ ns Note: This device’s current consumption increases as its operating frequency increases. Note that the power dissipation should not exceed the allowable power dissipation. |
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