D484 datasheet(1/5 Pages) AOSMD

部品番号	D484

部品情報	N-Channel Enhancement Mode Field Effect Transistor

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メーカー	AOSMD [Alpha & Omega Semiconductors]

ホームページ	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

17

25

55

60

RθJC

2.3

3

W

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Gate-Source Voltage

Drain-Source Voltage

30

Pulsed Drain Current

C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

Maximum

Units

Parameter

TC=25°C

TC=100°C

ID

25

80

Junction and Storage Temperature Range

A

PD

°C

50

25

-55 to 175

TC=100°C

Avalanche Current

C

15

Repetitive avalanche energy L=0.3mH

C

33

A

mJ

W

TA=70°C

1.3

Power Dissipation

A

TA=25°C

PDSM

2.1

AOD484

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 25 A (VGS = 10V)

RDS(ON) < 15 mΩ (VGS = 10V)

RDS(ON) < 23 mΩ (VGS = 4.5V)

UIS Tested!

General Description

The AOD484 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

Standard Product AOD484 is Pb-free (meets ROHS

& Sony 259 specifications). AOD484L is a Green

Product ordering option. AOD484 and AOD484L

are electrically identical.

G

D

S

G

D

S

TO-252

D-PAK

Top View

Drain Connected to

Tab

Alpha & Omega Semiconductor, Ltd.

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