STRH50P6FSY1 datasheet(1/13 Pages) STMICROELECTRONICS

部品番号	STRH50P6FSY1

部品情報	P-channel 60V - 0.047Ω - TO-254AA Rad-hard low gate charge STripFET??Power MOSFET

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メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

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1 / 13 page

November 2007

Rev 3

1/13

13

STRH50P6FSY1

STRH50P6FSY3

P-channel 60V - 0.047

Ω - TO-254AA

Rad-hard low gate charge STripFET™ Power MOSFET

Features

■ Low RDS(on)

■ Fast switching

■ Single event effect (SEE) hardned

■ Low total gate charge

■ Light weight

■ 100% avalanche tested

■ Application oriented characterization

■ Hermetically sealed

■ Heavy ion SOA

■ 100 kRad TID

■ SEL & SEGR with 34Mev/cm²/mg LET ions

Applications

■ Satellite

■ High reliability

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to sustain high TID

and provide immunity to heavy ion effects. It is

therefore suitable as power switch in mainly high-

efficiency DC-DC converters. It is also intended

for any application with low gate charge drive

requirements.

Figure 1.

Internal schematic diagram

Type

VDSS

STRH50P6FSY1

60 V

STRH50P6FSY3

60 V

TO-254AA

1

2

3

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STRH50P6FSY1 (1)

RH50P6FSY1

TO-254AA

Individual strip pack

STRH50P6FSY3 (2)

RH50P6FSY3

TO-254AA

Individual strip pack

1.

Mil temp range

2.

Space flights parts (full ESCC flow screening)

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同様の説明 - STRH50P6FSY1

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