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2N1893 データシート(PDF) 1 Page - STMicroelectronics |
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2N1893 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() 2N1893 October 1988 GENERAL PURPOSE HIGH-VOLTAGE TYPE The 2N1893 is a silicon planar epitaxial NPN tran- sistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switch- ing circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit VCBO Collector-base Voltage (IE =0) 120 V VCER Collector-emitter Voltage (RBE ≤ 10 Ω)100 V VCEO Collector-emitter Voltage (IB =0) 80 V VEBO Emitter-base Voltage (I C =0) 7 V I C Collector Current 0.5 A Pto t Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C at T cas e ≤ 100 °C 0.8 3 1.7 W W W Tstg,Tj Storage and Junction Temperature – 65 to 200 °C INTERNAL SCHEMATIC DIAGRAM Products approved to CECC 50002-104 avail- able on request. DESCRIPTION TO-39 1/5 |
同様の部品番号 - 2N1893 |
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同様の説明 - 2N1893 |
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