2N5657 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

6.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCE =375 V

0.01

ICEV

Collect or Cut-off

Current (VBE = -1.5V)

VCE =350 V

VCE =250 V

Tc =100

0.1

ICEO

Collect or Cut-off

Current (IB =0)

VCE =250 V

0.1

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =6 V

0.01

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

IC = 1 mA

350

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC = 100 mA

L = 50 mH

350

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =0.1 A

IB =10 mA

IC =0. 25 A

IB =25 mA

IC =0.5 A

IB =0.1 A

2.5

VBE

∗

Base-Emitt er Voltage

IC =0.1 A

VCE =10 V

hFE

∗

DC Current G ain

IC =50 mA

VCE =10 V

IC =0.1 A

VCE =10 V

IC =0. 25 A

VCE =10 V

IC =0.5 A

VCE =10 V

250

hfe

Small Signal Current

Gain

IC =0. 1 A

VCE = 10 V

f = 1KHz

Transit ion f requency

IC =50 mA

VCE =10 V

f =10MHz

MHz

CCBO

Collect or Base

Capacitance

VCB = 10 V

f = 100KHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curve

2N5657

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