2N6059 datasheet(1/4 Pages) STMICROELECTRONICS

部品番号	2N6059

部品情報	SILICON NPN POWER DARLINGTON TRANSISTOR

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2N6059

SILICON NPN POWER DARLINGTON TRANSISTOR

s

SGS-THOMSON PREFERRED SALESTYPE

s

HIGH GAIN

s

NPN DARLINGTON

s

HIGH CURRENT

s

HIGH DISSIPATION

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The 2N6059 is a silicon epitaxial-base NPN

transistor in monolithic Darlington configuration

mounted in Jedec TO-3 metal case.

It is inteded for use in power linear and low

frequency switching applications.

INTERNAL SCHEMATIC DIAGRAM

June 1997

1

2

TO-3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

100

V

VCEX

Collector-Emitter Voltage (VBE = -1.5V)

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

100

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

12

A

ICM

Collector Peak Current

20

A

IB

Base Current

0.2

A

Ptot

Total Dissipation at Tc

≤ 25 oC

150

W

Tstg

Storage Temperature

-65 to 200

oC

Tj

Max. Operating Junction Temperature

200

oC

For PNP types voltage and current values are negative.

R1 Typ. = 6 K

Ω

R2 Typ. = 55

Ω

1/4

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