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CSD87313DMST データシート(PDF) 8 Page - Texas Instruments

部品番号 CSD87313DMST
部品情報  CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs
PDF  15 Pages
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メーカー  TI2 [Texas Instruments]
ホームページ  https://www.ti.com
Logo TI2 - Texas Instruments

CSD87313DMST データシート(HTML) 8 Page - Texas Instruments

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CSD87313DMS
SLPS642 – APRIL 2017
www.ti.com
Product Folder Links: CSD87313DMS
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
6 Device and Documentation Support
6.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
6.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
6.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
USB Type-C is a trademark of USB Implementers Forum.
All other trademarks are the property of their respective owners.
6.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
6.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.



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