VGS - Gate-To-Source Voltage (V)

0

1

2

3

4

5

6

7

8

9

10

0

2

4

6

8

10

12

14

16

18

20

D006

TC = 25°C, I D = 23 A

TC = 125°C, I D = 23 A

Qg - Gate Charge (nC)

0

5

10

15

20

25

30

35

40

45

50

0

1

2

3

4

5

6

7

8

D010

ID = 23 A

VDS = 15 V

G1

G2

S2

D

S1

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Design

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

CSD87313DMS

SLPS642 – APRIL 2017

CSD87313DMS 30-V Dual N-Channel NexFET™ Power MOSFETs

1

1 Features

1

•

Low-Source-to-Source On Resistance

•

Dual Common Drain N-Channel MOSFETs

•

Optimized for 5-V Gate Drive

•

Low Qg and Qgd

•

Low-Thermal Resistance

•

Avalanche Rated

•

Lead-Free Terminal Plating

•

RoHS Compliant

•

Halogen Free

•

SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

•

USB Type-C™ and Power Delivery (PD) VBus

Protection

•

Battery Protection

•

Load Switch

3 Description

The CSD87313DMS is a 30-V common drain, dual N-

channel device designed for USB Type-C/PD and

battery protection. This SON 3.3-mm × 3.3-mm

device has low-source-to-source on resistance that

minimizes losses and offers low-component count for

space constrained applications.

Schematic

Product Summary

TA = 25°C

VALUE

UNIT

VS1S2

Source1-to-Source2 Voltage

30

V

Qg

Gate Charge Total (4.5 V)

28

nC

Qgd

Gate Charge Gate-to-Drain

6.0

nC

RS1S2(on)

Max Source1-to-Source2 On

Resistance

VGS = 2.5 V

9.6

m

Ω

VGS = 4.5 V

5.5

VGS(th)

Threshold Voltage

0.9

V

Device Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD87313DMS

2500

13-Inch Reel

SON

3.30-mm × 3.30-mm

Plastic Package

Tape

and

Reel

CSD87313DMST

250

7-Inch Reel

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated

VALUE

UNIT

VS1S2 Source1-to-Source2 Voltage

30

V

VGS

Gate-to-Source Voltage(1)

±10

V

IS1S2

Continuous Source Current(2)

17

A

ISM

Pulsed Source Current, TA = 25°C

(2)(3)

120

A

PD

Power Dissipation(2)

2.7

W

Power Dissipation(4)

1

TJ,

Tstg

Operating Junction,

Storage Temperature

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse,

ID = 37 A, L = 0.1 mH, RG = 25 Ω

67

mJ

(1) VG1S1 should not exceed ±10 V and VG2S2 should not exceed

±10 V.

(2) Typical RθJA = 45°C/W when mounted on a 1-in

2 (6.45-cm2),

2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick

FR4 PCB.

(3) Duty cycle

≤ 2%, pulse duration ≤ 300 µs.

(4) Typical RθJA = 125°C/W on a minimum 2-oz Cu pad.

RS1S2(ON) vs VGS

Gate Charge