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M58LR128GT データシート(PDF) 39 Page - STMicroelectronics

部品番号 M58LR128GT
部品情報  128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
PDF  84 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LR128GT データシート(HTML) 39 Page - STMicroelectronics

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M58LR128GT, M58LR128GB
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 17. Exact erase times may change depending
on the memory array condition. The best case is
when all the bits in the block are at ‘0’ (pre-pro-
grammed). The worst case is when all the bits in
the block are at ‘1’ (not preprogrammed). Usually,
the system overhead is negligible with respect to
the erase time. In the M58LR128GT/B the maxi-
mum number of Program/Erase cycles depends
on the VPP voltage supply used.
Table 17. Program/Erase Times and Endurance Cycles
Note: 1. TA = –25 to 85°C; VDD = 1.7V to 2V; VDDQ = 1.7V to 2V.
2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution).
3. Excludes the time needed to execute the command sequence.
4. This is an average value on the entire device.
Parameter
Condition
Min
Typ
Typical
after
100kW/E
Cycles
Max
Unit
Erase
Parameter Block (16 KWord)
0.4
1
2.5
s
Main Block (64 KWord)
Preprogrammed
1
3
4
s
Not Preprogrammed
1.2
4
s
Program(3)
SIngle Cell
Word Program
30
60
µs
Buffer Program
30
60
µs
Single Word
Word Program
90
180
µs
Buffer Program
90
180
µs
Buffer (32 Words) (Buffer Program)
440
880
µs
Main Block (64 KWord) (Buffer Program)
880
ms
Suspend
Latency
Program
20
25
µs
Erase
20
25
µs
Program/
Erase Cycles
(per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
Erase
Parameter Block (16 KWord)
0.4
2.5
s
Main Block (64 KWord)
1
4
s
Program(3)
Single Cell
Word Program
30
60
µs
Single Word
Word Program
85
170
µs
Buffer Enhanced Factory
Program(4)
10
µs
Buffer (32 Words)
Buffer Program
340
680
µs
Buffer Enhanced Factory
Program
320
µs
Main Block (64 KWords)
Buffer Program
640
ms
Buffer Enhanced Factory
Program
640
ms
Bank (8 Mbits)
Buffer Program
5
s
Buffer Enhanced Factory
Program
5s
Program/
Erase Cycles
(per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles



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