TSM4435CS datasheet(1/6 Pages) TSC

部品番号	TSM4435CS

部品情報	30V P-Channel MOSFET

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メーカー	TSC [Taiwan Semiconductor Company, Ltd]

ホームページ	http://www.taiwansemi.com

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TSM4435

30V P-Channel MOSFET

1/6

Version: A07

SOP-8

Features

●

Advance Trench Process Technology

●

High Density Cell Design for Ultra Low On-resistance

Application

●

DC-DC Conversion

●

Battery Switch

Ordering Information

Part No.

Package

Packing

TSM4435CS RL

SOP-8

2.5Kpcs / 13” Reel

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

-9.1

A

Pulsed Drain Current

IDM

-50

A

Continuous Source Current (Diode Conduction)

a,b

IS

-2.1

A

Ta = 25

oC

2.5

Maximum Power Dissipation

Ta = 75

oC

PD

1.6

W

Operating Junction Temperature

TJ

+150

oC

Operating Junction and Storage Temperature Range

TJ, TSTG

- 55 to +150

oC

Thermal Performance

Parameter

Symbol

Limit

Unit

Junction to Foot (Drain) Thermal Resistance

RӨJF

22

oC/W

Junction to Ambient Thermal Resistance (PCB mounted)

RӨJA

50

oC/W

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 10 sec.

PRODUCT SUMMARY

VDS (V)

RDS(on)(mΩ)

ID (A)

21 @ VGS = -10V

-9.1

-30

35 @ VGS = -4.5V

-6.9

Block Diagram

P-Channel MOSFET

Pin Definition:

1. Source

2. Source

3. Source

4. Gate

5, 6, 7, 8. Drain

同様の部品番号 - TSM4435CS

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同様の説明 - TSM4435CS

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