Silicon NPN Power Transistor

2N3739

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 5mA, IB= 0V

300

--

--

V

ICBO

Collector Cutoff Current

VCB= 325V, IE= 0V

--

--

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 6V, IC= 0V

--

--

0.1

mA

hFE1

DC Current Gain

IC= 10mA, VCE= 10V

30

--

--

hFE2

DC Current Gain

IC= 50mA, VCE= 10V

30

--

--

hFE3

DC Current Gain

IC= 100mA, VCE= 10V

40

--

--

hFE4

DC Current Gain

IC= 250mA, VCE= 10V

25

--

200

hFE5

DC Current Gain

IC= 500mA, VCE= 10V

10

--

--

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 100mA, IB= 10mA

--

--

0.75

V

IC= 250mA, IB= 25mA

--

--

2.5

V

VBE(on)

Base-Emitter on Voltage

IC= 100mA, VCE= 10V

--

--

1.0

V

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

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