50-4000 MHz SILICON GERMANIUM Gain Block

BGS2

1

Rev. 12.3

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change without notice. BeRex is a trademark of BeRex.

All other trademarks are the property of their respective owners. © 2021 BeRex

• Single Fixed 3V supply

• No Dropping Resistor Required

• No matching circuit needed

• Green/RoHS2 compliant SOT-363 package

• Application: Driver Amplifier, Cellular, PCS, GSM,

UMTS, WCDMA, Wireless Data

BeRex’s BGS2 is a high SiGe HBT MMIC am-

plifier, internally matched to 50 Ohms with-

out the need for external components. De-

signed to run directly from a 3V supply. The

BGS2 is designed for high linearity 3V gain

block applications . It is packaged in a RoHS2

-compliant with SOT-363 surface mount

package.

Product Description

Device Features

• Driver Amplifier

• Cellular, PCS, GSM, UMTS, WCDMA

Applications

Applications Circuit

*C1, C2, C3 =100 pF ± 5%; C4 = 1 nF ± 5%; C5 = 10uF; **L1 = 56nH

**less than 56nH improves RF performance at over 0.9GHz.

*1uH or higher value L1 improves RF performance at under 900MHz.

*Optimum value of L1 may vary with board design.

*C1,C2=2nF, L1=1uH for 70MHz application,

B2X

X

IN

GND

GND

OUT

GND

GND

Pin Description

RF IN

3

RF OUT

6

GND

1,2,4,5

Application Circuit Values Example

Freq.

70~900MHz

900MHz ~ 3GHz

3GHz ~ 4GHz

C1/C2

2nF

100pF

100pF

L1

1uH

56nH

27nH

(1608 Chip Ind.)

*C1,C2=100pF, L1=27nH for 3.5GHz application.

Part Marking (XX:Wafer number)

Electrical Specifications

Absolute Maximum Ratings

Parameter

Rating

Unit

Storage Temperature

-55 to +155

°C

Junction Temperature

+165

°C

Supply Voltage

+3.9

V

Supply Current

100

mA

Input RF Power

15

dBm

Operation of this device above any of these parameters may result in permanent damage.

Device performance _ measured on a BeRex evaluation board at 25°C, Vd=3V, 50 Ω system.

Parameter

Conditions

Min

Typ

Max

Unit

Operational

Frequency Range

50

4000

MHz

Test Frequency

900

MHz

Gain

22.1

23.6

dB

Input Return Loss

-18.3

dB

Output Return Loss

-12.8

dB

Output IP3

0 dBm / tone ,

Δf=1 MHz

22.5

25.5

dBm

Output P1dB

12.4

13.4

dBm

Noise Figure

2.3

dB

Parameter

Min

Typ

Max

Unit

Bandwidth

50

4000

MHz

IC @ (Vc = 3.0V)

28

34

40

mA

VC

2.85

3.0

3.3

V

dG/dT

-0.005

RTH

130

°C/W

Operating Case Temperature

-40

+105

°C

Recommended Operating Conditions

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating conditions.

C1

C2

RF In

RF Out

BGS2

Vcc

L1

C3

C4

C5