2

RF Device Data

Freescale Semiconductor

MRFE6S9045NR1

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

3A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

10

μAdc

On Characteristics

Gate Threshold Voltage

1

2

3

Vdc

Gate Quiescent Voltage

2.3

3.1

3.8

Vdc

Drain-Source On-Voltage

0.05

0.23

0.3

Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

—

1.02

—

pF

Output Capacitance

—

27

—

pF

Input Capacitance

—

81

—

pF

N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB

@ 0.01% Probability on CCDF

Power Gain

21

22.1

25

dB

Drain Efficiency

30.5

32

—

%

Adjacent Channel Power Ratio

ACPR

—

-46

-44

dBc

Input Return Loss

IRL

—

-19

-9

dB

(continued)