LM20242

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SNVS534E – OCTOBER 2007 – REVISED MARCH 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)

VIN to GND

-0.3V to +38V

BOOT to GND

-0.3V to +43V

BOOT to SW

-0.3V to +7V

SW to GND

-0.5V to +38V

SW to GND (Transient)

-1.5V (< 20 ns)

FB, EN, SS/TRK, PGOOD to GND

-0.3V to +6V

VCC to GND

-0.3V to +8V

Storage Temperature

-65°C to 150°C

ESD Rating

Human Body Model (2)

2kV

(1)

Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test

conditions, see the Electrical Characteristics.

(2)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor to each pin.

OPERATING RATINGS

VIN to GND

+4.5V to +36V

Junction Temperature

−40°C to + 125°C

ELECTRICAL CHARACTERISTICS

Unless otherwise stated, the following conditions apply: VVIN = 12V. Limits in standard type are for TJ = 25°C only, limits in

bold face type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are

specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C,

and are provided for reference purposes only.

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VFB

Feedback pin voltage

VVIN = 4.5V to 36V

0.788

0.8

0.812

V

VCOMP = 500 mV to 700 mV

RHSW-DS(ON)

High-Side MOSFET On-Resistance

ISW = 200 mA

130

225

m

Ω

RLSW-DS(ON)

Low-Side MOSFET On-Resistance

ISW = 200 mA

110

190

m

Ω

IQ

Operating Quiescent Current

VVIN = 4.5V to 36V

2

3

mA

ISD

Shutdown Quiescent current

VEN = 0V

150

180

µA

VUVLO

VIN Under Voltage Lockout

Rising VVIN

3.65

3.9

4.2

V

VUVLO(HYS)

VIN Under Voltage Lockout Hysteresis

200

400

mV

VVCC

VCC Voltage

IVCC = -5 mA, VEN = 5V

5.5

V

ISS

Soft-Start Pin Source Current

VSS = 0V

3

5

7

µA

IBOOT

BOOT Diode Leakage

VBOOT = 4V

10

nA

VF-BOOT

BOOT Diode Forward Voltage

IBOOT = -100 mA

0.9

1.1

V

Powergood

VFB(OVP)

Over Voltage Protection Rising Threshold

VFB(OVP) / VFB

107

110

112

%

VFB(OVP-HYS)

Over Voltage Protection Hysteresis

ΔVFB(OVP) / VFB

2

3

%

VFB(PG)

PGOOD Rising Threshold

VFB(PG) / VFB

93

95

97

%

VFB(PG-HYS)

PGOOD Hysteresis

ΔVFB(PG) / VFB

2

3

%

TPGOOD

PGOOD delay

20

µs

IPGOOD(SNK)

PGOOD Low Sink Current

VPGOOD = 0.5V

0.6

1

mA

IPGOOD(SRC)

PGOOD High Leakage Current

VPGOOD = 5V

5

200

nA

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