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FPD03784 データシート(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部品番号 FPD03784
部品情報  Low Power, Low EMI, TFT-LCD Column Driver with Dual, TTL Bus Inputs, 64 Grayshades, and 384 Outputs for XGA/SXGA Applications
PDF  12 Pages
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

FPD03784 データシート(HTML) 2 Page - National Semiconductor (TI)

  FPD03784 Datasheet HTML 1Page - National Semiconductor (TI) FPD03784 Datasheet HTML 2Page - National Semiconductor (TI) FPD03784 Datasheet HTML 3Page - National Semiconductor (TI) FPD03784 Datasheet HTML 4Page - National Semiconductor (TI) FPD03784 Datasheet HTML 5Page - National Semiconductor (TI) FPD03784 Datasheet HTML 6Page - National Semiconductor (TI) FPD03784 Datasheet HTML 7Page - National Semiconductor (TI) FPD03784 Datasheet HTML 8Page - National Semiconductor (TI) FPD03784 Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Absolute Maximum Ratings (Note 1)
Analog Supply, (V
DD2) (Note 2)
−0.3V to +10.5V
Logic Supply, (V
DD1) (Note 2)
−0.3V to +5.0V
High Bias Supply, (V
HBIAS) (Note 2)
−0.3V to +12.0V
Low-Polarity RDAC Reference
Voltages, (V
GMA7 to VGMA12)
(Note 2)
−0.3V to 0.5V
DD2
High-Polarity RDAC Reference
Voltages, (V
GMA1 to VGMA6)
(Note 2)
0.5V
DD2 − 1.0V to
V
DD2 + 0.3V
RDAC Current (All Gamma Voltage
Taps), (I
GMA to IGMA12)
−2.5mA to 2.5mA
Input Voltage (Digital Logic), (V
IN)
(Note 2)
−0.3V to V
DD1 + 0.3V
Output Voltage, (V
OUT) (Note 2)
−0.3V to V
DD2 + 0.3V
Output Current (Analog), (I
OUT)
−7mA to +7mA
Input Current Source, (I
SIN)
−200µA to +200µA
Output Current Source, (I
SOUT)
−200µA to +200µA
IREF Current, (I
REF)
−1mA to +0.2mA
Storage Temperature Range, (T
S)
−55˚C to +125˚C
Note 1: “Absolute Maximum Ratings” are those values beyond which the
safety of the device cannot be guaranteed. They are not meant to imply that
the devices should be operated at these limits. The table of “Electrical
Characteristics” specifies conditions of device operation.
Note 2: Absolute voltages referenced to VSS1 =VSS2 = 0.0V.
Recommended Operating
Conditions
Min
Typ
Max
Units
Logic Supply Voltage
3.0
3.3
3.6
V
(V
DD1)
(3.3V OR 2.5V)
2.25
2.5
2.75
V
Supply Voltage (V
DD2)
7.5
9.5
V
Operating Temperature
(T
A)
−10
+25
+70
˚C
DC Electrical Characteristics
Digital Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IH
Input High Voltage
0.7 V
DD1
V
V
IL
Input Low Voltage
0.3 V
DD1
V
V
OH
Output High Voltage
I
OH = −0.5mA
V
DD1 − 0.5
V
V
OL
Output Low Voltage
I
OL = 0.5mA
0.5
V
I
DD1
Logic Current
(Note 3)
0.6
mA
I
DD1
Logic Current
(Note 4)
0.36
mA
I
IH
Input Leakage
V
DD1 = 3.6V, VIN = 3.6V
1
µA
I
IL
Input Leakage
V
DD1 = 3.6V, VIN =0V
1
µA
C
IN
Input Capacitance
2
pF
Note 3: CLK frequency = 32.5 MHz, VDD1 = 3.3V, VSS1 =VSS2 = 0.0V, RIREF = 220 kΩ, charge share time = 1.5µs, line time = 22µs.
Note 4: CLK frequency = 32.5 MHz, VDD1 = 2.5V, VSS1 =VSS2 = 0.0V, RIREF = 220 kΩ, charge share time = 1.5µs, line time = 22µs.
Analog Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Units
I
DD2
Supply Current Consumption
(Note 5)
4.0
mA
PD
Power Dissipation
(Note 5)
40
mW
V
GMA1
Upper RDAC High Side Input
(Note 6)
V
DD2/2 + 0.2
V
DD2 − 0.2
V
V
GMA6
Upper RDAC Low Side Input
(Note 6)
V
DD2/2 + 0.2
V
DD2 − 0.2
V
V
GMA7
Lower RDAC High Side Input
VDD2
≥ 8.5V(Note 6)
0.2
V
DD2/2 − 0.2
V
VDD2 < 8.5V
0.2
V
DD2/2 − 0.4
V
V
GMA12
Lower RDAC Low Side Input
(Note 6)
0.2
V
DD2/2 − 0.2
V
V
HBIAS
Voltage of High Bias Current
Supply:
V
HBIAS =VDD2
V
DD2
V
DD2
Separate V
HBIAS Supply
≥ V
GMA1 +
1.5V and
≥
8.5V
V
DD2 + 2.0
V
V
CS
Charge Share Voltage
The Greater
of V
DD1 or
V
GMA7
V
GMA6
V
C
LOAD
Output Capacitive Load
30
80
pF
V
OUT
Output Voltage Range
V
SS2 + 0.2
V
DD2 − 0.2
V
A
IREF
I
REF to IMAX Gain Factor
(Note 7)
8
10
12
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