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BDW83C データシート(PDF) 1 Page - STMicroelectronics |
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BDW83C データシート(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE s COMPLEMENTARY PNP - NPN DEVICES s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH DC CURRENT GAIN APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary type is BDW84C. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW83C PNP BDW84C VCBO Collector-Base Voltage (IE = 0) 100 V VCEO Collector-Emitter Voltage (IB = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 15 A ICM Collector Peak Current 40 A IB Base Current 0.5 A Ptot Total Dissipation at Tc ≤ 25 oC 130 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 TO-218 1/4 |
同様の部品番号 - BDW83C |
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同様の説明 - BDW83C |
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