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V1.1

17/09/19

General Purpose Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Absolute Maximum Ratings

Description:

GeneralpurposeNPNsiliconplanarepitaxialtransistors,bestsuitedforuseindriverstagesofaudioamplifiers,

lownoiseinputstagesoftaperecorders.Hi-Fiamplifiers,signalprocessingcircuitsoftelevisionreceivers.

Parameter

Symbol

Value

Units

Collector-Emitter Voltage

V

CEO

45

V

Collector-Emitter Voltage

V

CES

50

Emitter-Base Voltage

V

EBO

6

Collector Current Continuous

I

C

100

mA

Power Dissipation at T

a = 25°C

Derate Above 25°C

P

D

350

2.8

mW

mW/°C

Total Device Dissipation at T

c = 25°C

Derate Above 25°C

1

8

W

mW/°C

Operating and Storage Junction

Temperature Range

T

j, Tstg

-55 to + 150

°C

Thermal Resistance

Junction to Ambient

R

th (j-a)

375

ºC/W

Junction to Case

R

th (j-c)

125

Pin Configuration:

1. Emitter

2. Base

3. Collector