Nexperia

PRMD2

50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET)

PRMD2

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Product data sheet

14 June 2017

6 / 15

IC (mA)

10-1

102

10

1

006aac794

102

10

103

hFE

1

(2)

(3)

(1)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 3. NPN transistor: DC current gain as a function

of collector current; typical values

VCE (V)

0

5

4

2

3

1

aaa-018665

0.04

0.06

0.02

0.08

0.1

IC

(A)

0

IB = 0.06 mA

0.12 mA

0.18 mA

0.24 mA

0.30 mA

0.36 mA

0.42 mA

0.54 mA

0.48 mA

0.60 mA

Tamb = 25 °C

Fig. 4. NPN transistor: Collector current as a function

of collector-emitter voltage; typical values

aaa-018664

IC (mA)

10-1

102

10

1

10-1

1

VCEsat

(V)

10-2

(1)

(3)

(2)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 5. NPN transistor: Collector-emitter saturation

voltage as a function of collector current;

typical values

006aac796

IC (mA)

10-1

102

10

1

1

10

VI(on)

(V)

10-1

(1)

(2)

(3)

VCE = 0.3 V

(1) Tamb = -40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig. 6. NPN transistor: On-state input voltage as a

function of collector current; typical values