BFX34 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-amb

Max

200

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 60 V

0.02

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 4 V

0.05

µA

V(BR)CBO

∗

Collector-base

Breakdown Voltage

(IE = 0)

IC = 5 mA

120

VCEO(sus)

∗

Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

VEBO

∗

Emitter-base Voltage

(IC = 0)

IE = 1 mA

VCE(sat)

∗

Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

0.4

VBE(sat)

∗

Base-Emitter

Saturation Voltage

IC = 5 A

IB = -0.5 A

1.3

1.6

hFE

∗

DC Current Gain

IC = 1 A

VCE = 2 V

IC = 1.5 A

VCE = 0.6 V

IC = 2 A

VCE = 2 V

100

150

∗

Transition Frequency

IC = 0.5 A

VCE = 5 V

f = 20 MHz

100

MHz

CEBO

Emitter-base

Capacitance

IC = 0.5 A

VEB = 5 V

f = 1 MHz

300

500

CCBO

Collector-base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

100

ton

Turn-on Time

IC = -0.5 A

VCC = -20 V

IB1 = -IB2 = -50 mA

0.6

0.25

µs

ton

Turn-on Time

0.6

1.2

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BFX34

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