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BU807 データシート(PDF) 2 Page - STMicroelectronics |
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BU807 データシート(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 70 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) for BU807 VCE = 330 V for BU806 VCE = 400 V 100 100 µA µA ICEV Collector Cut-off Current (VBE = -6V) for BU807 VCE = 330 V for BU806 VCE = 400 V 100 100 µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = 6 V 3.5 mA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA for BU807 for BU806 150 200 V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5A IB = 50mA 1.5 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 5A IB = 50mA 2.4 V VF ∗ Damper Diode Forward Voltage IF = 4A 2 V ton toff ts tf RESISTIVE LOAD Turn-on Time Turn-off Time Storage Time Fall Time IC = 5 A VCC = 100 V IB1 = 50 mA IB2 = -500 mA 0.35 0.4 0.55 0.2 1 µs µs µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 % BU806 / BU807 2/4 |
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