BUL128 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.78

62. 5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =-1.5 V)

VCE =700 V

Tj =125

o C

100

500

µA

VEBO

Emitt er-Base Voltage

IE =10 mA

VCEO(sus)

Collect or-Emitter

Sustaining Voltage

IC = 100 mA

L = 25 mH

400

ICEO

Collect or Cut-Off

Current (IB =0)

VCE =400 V

250

µA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =0.5 A

IB =0.1 A

IC =1 A

IB =0.2 A

IC =2. 5 A

IB =0.5 A

IC =4 A

IB =1 A

0.5

0.7

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =0. 5 A

IB =0.1 A

IC =1 A

IB =0.2 A

IC =2. 5 A

IB =0.5 A

1.1

1.2

1.3

hFE

∗

DC Current G ain

IC =10 mA

VCE =5 V

IC =2 A

VCE =5 V

Group A

Group B

RESI STIVE LO AD

St orage Time

Fall T ime

VCC =125 V

IC =2 A

IB1 =0.4 A

IB2 =-0.4 A

Tp =30

µs

(see f ig.2)

1. 5

0.2

0.4

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =2 A

IB1 =0.4 A

VBEoff =-5 V

RBB =0

Ω

Vcla mp = 200 V

(see f ig.1)

0.6

0.1

0.2

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). SGS-THOMSON reserves the right to ship either groups

according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.

BUL128

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