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BUL58D データシート(PDF) 2 Page - STMicroelectronics

部品番号 BUL58D
部品情報  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUL58D データシート(HTML) 2 Page - STMicroelectronics

  BUL58D Datasheet HTML 1Page - STMicroelectronics BUL58D Datasheet HTML 2Page - STMicroelectronics BUL58D Datasheet HTML 3Page - STMicroelectronics BUL58D Datasheet HTML 4Page - STMicroelectronics BUL58D Datasheet HTML 5Page - STMicroelectronics BUL58D Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.47
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collect or Cut-off
Current (VBE =0)
VCE =800 V
VCEO =800 V
Tj =125
oC
200
500
µA
µA
ICEO
Collect or Cut-off
Current (IB =0)
VCE =450 V
200
µA
VCEO(sus)
Collect or-Emitter
Sustaining Voltage
IC = 100 mA
L = 25 mH
450
V
VEBO
Emitt er-Base Voltage
(IC =0)
IE =10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =4 A
IB =0.8 A
IC =5 A
IB =1 A
1.5
2
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =4 A
IB =0.8 A
IC =5 A
IB =1 A
1.3
1.5
V
V
hFE
∗
DC Current G ain
IC =5 A
VCE =5 V
IC =500 mA
VCE =5 V
5
38
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =2 A
IB1 =0.4 A
VBE(off) =-5 V
RBB =0
Ω
VCL = 250 V
L = 200
µH
1
90
1.8
180
µs
ns
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =2 A
IB1 =0.4 A
VBE(off) =-5 V
RBB =0
Ω
VCL = 250 V
L = 200
µH
Tj = 125
oC
1.5
180
µs
ns
Vf
Diode Forward Volt age
IC =3 A
3
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL58D
2/6



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