7

LPV511

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SNOSAG7D – AUGUST 2005 – REVISED AUGUST 2016

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Copyright © 2005–2016, Texas Instruments Incorporated

Electrical Characteristics: 5 V (continued)

Unless otherwise specified, all limits are specified for TJ = 25°C, V

+ = 5 V, V− = 0 V, V

CM = VO = V

+/2, and R

L = 100 kΩ to

V

+/2.(1)

PARAMETER

TEST CONDITIONS

MIN(2)

TYP(3)

MAX(2)

UNIT

(6)

The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.

(7)

Slew rate is the average of the rising and falling slew rates.

VO

Output swing high

VID = 100 mV

TJ = 25°C

4.8

4.89

V

TJ = –40°C to 85°C

4.75

Output swing low

VID = −100 mV

TJ = 25°C

110

200

mV

TJ = –40°C to 85°C

250

ISC

Output short circuit current(6)

Sourcing to V−

VID = 100 mV

–550

–225

µA

Sinking to V+

VID = −100 mV

225

1350

IS

Supply current

TJ = 25°C

0.97

1.2

µA

TJ = –40°C to 85°C

1.5

SR

Slew rate(7)

AV = 1, VO ramps from

0.5 V to 4.5 V

TJ = 25°C

5.25

7.5

V/ms

TJ = –40°C to 85°C

3.1

GBW

Gain bandwidth product

RL = 1 MΩ, CL= 50 pF

27

kHz

Phase margin

RL = 1 MΩ, CL= 50 pF

53

°

en

Input-referred voltage noise

f = 100 Hz

320

nV/

√Hz

in

Input-referred current noise

f = 10 Hz

0.02

pA/

√Hz

f = 1 kHz

0.01

(1)

Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device.

(2)

Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the

Statistical Quality Control (SQC) method.

(3)

Typical values represent the most likely parametric norm at the time of characterization.

(4)

Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by

dividing the change in VOS at temperature extremes into the total temperature change.

(5)

Positive current corresponds to current flowing into the device.

6.7 Electrical Characteristics: 12 V

Unless otherwise specified, all limits are specified for TJ = 25°C, V

+ = 12 V, V− = 0 V, V

CM = VO = V

+/2, and R

L = 100 kΩ to

V

+/2.(1)

PARAMETER

TEST CONDITIONS

MIN(2)

TYP (3)

MAX (2)

UNIT

VOS

Input offset voltage

TJ = 25°C

±0.2

±3

mV

TJ = –40°C to 85°C

±3.8

TC VOS Input offset voltage drift

(4)

TJ = 25°C

±0.3

µV/°C

TJ = –40°C to 85°C

±15

IB

Input bias current(5)

VCM = 0.5 V

TJ = 25°C

−1000

−320

pA

TJ = –40°C to 85°C

−1600

VCM = 11.5 V

TJ = 25°C

110

800

TJ = –40°C to 85°C

1900

IOS

Input offset current

±10

pA

CMRR

Common mode rejection ratio

VCM Stepped from

0 V to 6 V

TJ = 25°C

75

115

dB

TJ = –40°C to 85°C

70

VCM Stepped from

11.4 V to 12 V

TJ = 25°C

75

110

TJ = –40°C to 85°C

68

VCM Stepped from

0.5 V to 11.5 V

TJ = 25°C

70

97

TJ = –40°C to 85°C

65